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IRF820AS - Power MOSFET

Key Features

  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available.
  • Fully Characterized Capacitance and Avalanche Voltage and Current Available.
  • Effective Coss specified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF820AS, SiHF820AS, IRF820AL, SiHF820AL www.vishay.com Vishay Siliconix Power MOSFET D I2PAK (TO-262) D2PAK (TO-263) G DS G D S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 3.0 17 4.3 8.5 Single FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available • Fully Characterized Capacitance and Avalanche Voltage and Current Available • Effective Coss specified • Material categorization: for definitions of compliance please see www.vishay.