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IRF9510 - Power MOSFET

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated Available.
  • P-channel.
  • 175 °C operating temperature Available.
  • Fast switching.
  • Ease of paralleling.
  • Simple drive requirements.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with.

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Datasheet Details

Part number IRF9510
Manufacturer Vishay
File Size 152.96 KB
Description Power MOSFET
Datasheet download datasheet IRF9510 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com IRF9510 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 1.2 8.7 2.2 4.1 Single ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • P-channel • 175 °C operating temperature Available • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
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