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IRFD110 Datasheet Power MOSFET

Manufacturer: Vishay

Overview: www.vishay.com IRFD110 Vishay Siliconix Power MOSFET D HVMDIP S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.3 2.3 3.8 Single 0.

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.

The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • For automatic insertion.
  • End stackable.
  • 175 °C Operating Temperature.
  • Fast switching and ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.