IRFD110 Description
Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1.
IRFD110 Key Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- For automatic insertion
- End stackable
- 175 °C Operating Temperature
- Fast switching and ease of paralleling
- Material categorization: for definitions of pliance