Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standa
Key Features
Dynamic dV/dt rating.
Repetitive avalanche rated.
For automatic insertion.
End stackable.
P-channel.
175 °C operating temperature.
Fast switching.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.
Full PDF Text Transcription for IRFD9020 (Reference)
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IRFD9020. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com IRFD9020 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 19 5.4 11 Single 0....
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C) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 19 5.4 11 Single 0.28 HVMDIP S G D S G D P-Channel MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which ca