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IRFD9210 Datasheet Power MOSFET

Manufacturer: Vishay

Overview: www.vishay.com IRFD9210 Vishay Siliconix Power MOSFET HVMDIP S G S G D D P-Channel MOSFET PRODUCT SUMMARY VDS (V) -200 RDS(on) (Ω) VGS = -10 V 3.0 Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.

General Description

The power MOSFETs technology is the key to Vishay advanced line of power MOSFET transistors.

The efficient geometry and unique processing of the power MOSFETs design archieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated.
  • For automatic insertion.
  • End stackable.
  • P-channel.
  • Fast switching.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.