IRFI530G Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s
- Sink to Lead Creepage Distance = 4.8 mm
- 175 °C Operating Temperature
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
- Part: IRFI530G
- Manufacturer: Vishay (official site)
- Size: 667.12 KB
Other IRFI530G Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRFI530G | HEXFET Power MOSFET |
Inchange Semiconductor |
IRFI530G | N-Channel MOSFET |
Fairchild |
IRFI530A | Advanced Power MOSFET |
|
International Rectifier |
IRFI530N | HEXFET Power MOSFET |
|
International Rectifier |
IRFI530NPBF | Power MOSFET |
IRFI530G Description
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.