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IRFI620G Datasheet Power MOSFET

Manufacturer: Vishay

Overview: Power MOSFET IRFI620G, SiHFI620G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 14 3.0 7.9 Single 0.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS.
  • Sink to Lead Creepage Distance = 4.8 mm.

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