IRFI9Z34G Datasheet (Power MOSFET)

Part: IRFI9Z34G
Manufacturer: Vishay (official site)
Size: 809.15 KB

IRFI9Z34G Key Features

Isolated package
High voltage isolation = 2.5 kVRMS (t = 60 s
Sink to lead creepage distance = 4.8 mm
P-channel
175 °C operating temperature
Dynamic dV/dt rating
Low thermal resistance
Material categorization: for definitions of pliance

Other IRFI9Z34G Datasheets

Manufacturer	Part Number	Description
International Rectifier	IRFI9Z34G	HEXFET Power MOSFET
International Rectifier	IRFI9Z34GPBF	POWER MOSFET
International Rectifier	IRFI9Z34N	HEXFET Power MOSFET

View all IRFI9Z34G datasheets →

IRFI9Z34G Description

Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.