IRFIBC40G mosfet equivalent, power mosfet.
* Isolated Package
* Low Thermal Resistance
* Sink to Lead Creepage Dist. = 4.8 mm
* High Voltage Isolation = 2.5 kVRMS (t = 60 s,
f = 60 Hz)
* Dynami.
The molding compound used provides a high isolation capability and a low thermal resistance between the tab and externa.
Image gallery
Download