Datasheet4U Logo Datasheet4U.com

IRFIZ44G - Power MOSFET

Description

Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • Isolated package.
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to lead creepage distance = 4.8 mm.
  • 175 °C operating temperature.
  • Dynamic dV/dt rating.
  • Low thermal resistance.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

📁 Similar Datasheet

  • IRFIZ44G - HEXFET POWER MOSFET (International Rectifier)
  • IRFIZ44G - N-Channel MOSFET (INCHANGE)
  • IRFIZ44GPBF - Power MOSFET (International Rectifier)
  • IRFIZ44A - Power MOSFET (Samsung)
  • IRFIZ44A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRFIZ44N - Power MOSFET (International Rectifier)
  • IRFIZ44N - Power MOSFET (Infineon)
  • IRFIZ44N - N-Channel MOSFET (INCHANGE)
  • IRFIZ44NPbF - Power MOSFET (Infineon)
  • IRFIZ44NPBF - HEXFET Power MOSFET (International Rectifier)
Other Datasheets by Vishay

Full PDF Text Transcription

Click to expand full text
www.vishay.com IRFIZ44G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 95 27 46 Single 0.028 FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Published: |