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Vishay Intertechnology Electronic Components Datasheet

IRFP17N50L Datasheet

Power MOSFET

No Preview Available !

IRFP17N50L, SiHFP17N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
130
33
59
Single
0.28
TO-247AC
D
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
S
N-Channel MOSFET
SnPb
FEATURES
• SuperFast Body Diode Eliminates the Need
For External Diodes in ZVS Applications
• Low Gate Charge Results in Simple Drive
Requirement
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supply
• Motor Control applications
TO-247AC
IRFP17N50LPbF
SiHFP17N50L-E3
IRFP17N50L
SiHFP17N50L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.0 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12).
c. ISD 16 A, dI/dt 347 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
16
11
64
1.8
390
16
22
220
13
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRFP17N50L Datasheet

Power MOSFET

No Preview Available !

IRFP17N50L, SiHFP17N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
0.56
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.9 Ab
VDS = 50 V, ID = 9.9 Ab
500 -
-V
- 0.60 - V/°C
3.0 - 5.0 V
- - ± 100 nA
- - 50 μA
- - 2.0 mA
-
0.28 0.32
Ω
11 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Coss eff.
Effective Output Capacitance
(Energy Related)
Coss eff. (ER)
Internal Gate Resistance
Rg
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VDS = 400 V , f = 1.0 MHz
VDS = 0 V to 400 V
f = 1 MHz, open drain
VGS = 10 V
ID = 16 A, VDS = 400 V
see fig. 7 and 15b
VDD = 250 V, ID = 16 A
RG = 7.5 Ω, VGS = 10 V
see fig. 14a and 14bb
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2760
325
37
3690
84
159
120
1.4
-
-
-
21
51
50
28
-
-
-
-
-
-
-
-
130
33
59
-
-
-
-
pF
Ω
nC
ns
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
ISM
integral reverse
p - n junction diode
D
G
S
- - 16
A
- - 64
Body Diode Voltage
VSD
TJ = 25 °C, IS = 16 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C
TJ = 125 °C
IF = 16 A,
- 170 250
ns
- 220 330
Qrr
TJ = 25 °C
TJ = 125 °C
dI/dt = 100 A/μsb
- 470 710
μC
- 810 1210
Reverse Recovery Current
IRRM
TJ = 25 °C
- 7.3 11
Forward Turn-On Time
Notes
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising fom 0 % to 80 % VDS.
COSS eff. (ER) is a fixed capacitance that stores the same energy as COSS while VDS is rising fom 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91205
S11-0446-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRFP17N50L
Description Power MOSFET
Maker Vishay
PDF Download

IRFP17N50L Datasheet PDF






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