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Vishay Intertechnology Electronic Components Datasheet

IRFPC60 Datasheet

Power MOSFET

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IRFPC60 pdf
Power MOSFET
IRFPC60, SiHFPC60
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
210
26
110
Single
0.40
TO-247AC
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power levels
preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because of
its isolated mounting hole. It also provides greater creepage
distance between pins to meet the requirements of most
safety specifications.
TO-247AC
IRFPC60PbF
SiHFPC60-E3
IRFPC60
SiHFPC60
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 7.2 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12).
c. ISD 16 A, dI/dt 140 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
600
± 20
16
10
64
2.2
1000
16
28
280
3.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91245
S11-0442-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRFPC60 Datasheet

Power MOSFET

No Preview Available !

IRFPC60 pdf
IRFPC60, SiHFPC60
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.45
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.6 Ab
VDS = 50 V, ID = 9.6 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 16 A, VDS = 360 V,
see fig. 6 and 13b
VDD = 300 V, ID = 16 A,
Rg = 4.5 Ω, RD= 18 Ω
see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
Drain-Source Body Diode Characteristics
MIN.
600
-
2.0
-
-
-
-
13
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
830 - mV/°C
- 4.0 V
- ± 100 nA
- 100
μA
- 500
- 0.40 Ω
- -S
3900
440
98
-
-
-
19
54
110
56
5.0
-
-
-
210
26
110
-
-
-
-
-
13 -
pF
nC
ns
nH
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D - - 16
integral reverse
G
A
Pulsed Diode Forward Currenta
ISM p - n junction diode
S - - 64
Body Diode Voltage
VSD
TJ = 25 °C, IS = 16 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 16 A,
dI/dt = 100 A/μsb
- 610 920 ns
- 6.6 9.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91245
S11-0442-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRFPC60
Description Power MOSFET
Maker Vishay
Total Page 9 Pages
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IRFPC60 Datasheet PDF
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