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Vishay Intertechnology Electronic Components Datasheet

IRFPE30 Datasheet

Power MOSFET

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Power MOSFET
IRFPE30, SiHFPE30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
800
VGS = 10 V
78
Qgs (nC)
9.6
Qgd (nC)
45
Configuration
Single
3.0
TO-247AC
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third Generation Power MOSFETs from Vishay provide the
designer with best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247AC
IRFPE30PbF
SiHFPE30-E3
IRFPE30
SiHFPE30
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 18 mH, Rg = 25 Ω, IAS = 4.1 A (see fig. 12).
c. ISD 4.1 A, dI/dt 100 A/μs, VDD 600, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
800
± 20
4.1
2.6
16
1.0
170
4.1
13
125
2.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91246
S11-0442-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRFPE30 Datasheet

Power MOSFET

No Preview Available !

IRFPE30, SiHFPE30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 800 V, VGS = 0 V
VDS = 640 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.5 Ab
VDS = 50 V, ID = 2.5 Ab
800 -
-V
- 0.90 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 100
μA
- - 500
- - 3.0 Ω
2.4 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 4.1 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 400 V, ID = 4.1 A ,
Rg = 12 Ω, RD = 95 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
1300
310
190
-
-
-
12
33
82
30
-
-
-
78
9.6
45
-
-
-
-
pF
nC
ns
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 5.0 -
nH
- 13 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 4.1
A
- - 16
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.1 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/μsb
-
480 720 ns
Qrr - 1.8 2.7 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91246
S11-0442-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRFPE30
Description Power MOSFET
Maker Vishay
PDF Download

IRFPE30 Datasheet PDF






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