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IRFU9010 - Power MOSFET

Download the IRFU9010 datasheet PDF. This datasheet also includes the IRFR9010 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRFR9010-Vishay.pdf) that lists specifications for multiple related part numbers.

General Description

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance;

superior reverse energy and diode recovery dV/dt capability.

Overview

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D S G GS GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration -50 VGS = -10 V 9.1 3.0 5.9 Single 0.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche ratings.
  • Surface-mount (IRFR9010, SiHFR9010).
  • Straight lead (IRFU9010, SiHFU9010).
  • Simple drive requirements.
  • Ease of paralleling Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung Electronics Logo IRFU9010 (IRFR9010/14 / IRFU9010/14) P-Channel Power MOSFET Samsung Electronics
International Rectifier Logo IRFU9010 P-Channel Transistor International Rectifier

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