Datasheet Summary
Power MOSFET
IRL620, SiHL620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
200 VGS = 5.0 V
Qgs (nC)
Qgd (nC)
Configuration
Single
TO-220AB
S N-Channel MOSFET
Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- Fast Switching
Available
RoHS-
PLIANT
- Ease of paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package...
