IRLIZ24G Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s
- Sink to Lead Creepage Distance = 4.8 mm
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- Fast Switching
- Ease of Paralleling
- Lead (Pb)-free
- Part: IRLIZ24G
- Manufacturer: Vishay (official site)
- Size: 1.39 MB
Other IRLIZ24G Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRLIZ24G | HEXFET POWER MOSFET |
Inchange Semiconductor |
IRLIZ24G | N-Channel MOSFET |
|
International Rectifier |
IRLIZ24N | Power MOSFET |
|
International Rectifier |
IRLIZ24NPBF | Power MOSFET |
IRLIZ24G Description
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.