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Vishay Intertechnology Electronic Components Datasheet

IRLR120 Datasheet

Power MOSFET

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IRLR120 pdf
www.vishay.com
IRLR120, IRLU120, SiHLR120, SiHLU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5.0 V
12
3.0
7.1
Single
0.27
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR120, SiHLR120)
• Straight Lead (IRLU120, SiHLU120)
• Available in Tape and Reel
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free SiHLR120-GE3
Lead (Pb)-free
IRLR120PbF
SiHLR120-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHLR120TRL-GE3
IRLR120TRLPbFa
SiHLR120TL-E3a
DPAK (TO-252)
SiHLR120TR-GE3
IRLR120TRPbFa
SiHLR120T-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 , IAS = 7.7 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
DPAK (TO-252)
SiHLR120TRR-GE3
IRLR120TRRPbFa
SiHLR120TR-E3a
LIMIT
100
± 10
7.7
4.9
31
0.33
0.020
210
7.7
4.2
42
2.5
5.5
- 55 to + 150
260
IPAK (TO-251)
SiHLU120-GE3
IRLU120PbF
SiHLU120-E3
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0167-Rev. D, 04-Feb-13
1
Document Number: 91324
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRLR120 Datasheet

Power MOSFET

No Preview Available !

IRLR120 pdf
www.vishay.com
IRLR120, IRLU120, SiHLR120, SiHLU120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 10 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 125 °C
VGS = 5.0 V
ID = 4.6 Ab
VGS = 4.0 V
ID = 3.9 Ab
VDS = 50 V, ID = 4.6 Ab
100 -
-V
- 0.13 - V/°C
1.0 - 2.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.27
- - 0.38
4.4 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 490 -
- 150 - pF
- 30 -
VGS = 5.0 V
ID = 9.2 A, VDS = 80 V,
see fig. 6 and 13b
-
-
-
- 12
- 3.0 nC
- 7.1
- 9.8 -
VDD = 50 V, ID = 9.2 A,
Rg = 9.0 , RD = 5.2 , see fig. 10b
- 64 -
ns
- 21 -
- 27 -
Between lead,
6 mm (0.25") from
package and center of
die contactc
D
G
S
- 4.5 -
nH
- 7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 7.7
A
- - 31
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb
- - 2.5 V
trr
Qrr
- 110 140 ns
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb
-
0.80 1.0
μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S13-0167-Rev. D, 04-Feb-13
2
Document Number: 91324
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRLR120
Description Power MOSFET
Maker Vishay
Total Page 11 Pages
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IRLR120 pdf
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