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IRLZ34S Datasheet Power MOSFET

Manufacturer: Vishay

Overview: www.vishay.com IRLZ34S, SiHLZ34S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5 V 35 7.1 25 Single 0.

General Description

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4.

Key Features

  • Advanced process technology.
  • Surface-mount.
  • 175 °C operating temperature Available.
  • Fast switching.
  • Fully avalanche rated Available.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.  Please see.