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Vishay Intertechnology Electronic Components Datasheet

M2035S-E3 Datasheet

Schottky Barrier Rectifier

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www.vishay.com
M2035S-E3, M2045S-E3
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AB
3
2
1
12
3 CASE
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
35 V, 45 V
IFSM
VF at IF = 20 A
200 A
0.55 V
TJ max.
150 °C
Package
TO-220AB
Diode variations
Single die
FEATURES
• Trench MOS Schottky technology
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig.1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Peak repetitive reverse current per leg at tp = 2 μs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dV/dt
TJ, TSTG
M2035S
M2045S
35 45
20
200
2.0
10 000
- 55 to + 150
UNIT
V
A
A
A
V/μs
°C
Revision: 28-Nov-13
1 Document Number: 88953
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

M2035S-E3 Datasheet

Schottky Barrier Rectifier

No Preview Available !

www.vishay.com
M2035S-E3, M2045S-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Instantaneous forward voltage
Maximum reverse current at rated VR
Typical junction capacitance
VF (1)
IR (2)
CJ
IF = 10 A
IF = 20 A
IF = 10 A
IF = 20 A
4.0 V, 1 MHz
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TYP.
MAX.
0.52 -
0.62 0.70
0.42 -
0.55 0.61
80 200
24 35
700
UNIT
V
μA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M2035S
Typical thermal resistance
RJC
2.0
M2045S
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
M2045S-E3/4W
1.877
4W
BASE QUANTITY
50/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
300
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 28-Nov-13
2 Document Number: 88953
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number M2035S-E3
Description Schottky Barrier Rectifier
Maker Vishay
Total Page 4 Pages
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