* Trench MOS Schottky technology
* Power pack
* Guardring for overvoltage protection
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Solder dip 275 °C max.10
M2035S-E3 Datasheet (113.18 KB)
M2035S-E3
113.18 KB
Schottky barrier rectifier.
www.vishay.com M2035S-E3, M2045S-E3 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB 3 2 1 12 3 CASE PRIMARY CHARACTERISTICS IF(.
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