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M2045S-E3 - Schottky Barrier Rectifier

This page provides the datasheet information for the M2045S-E3, a member of the M2035S-E3 Schottky Barrier Rectifier family.

Features

  • Trench MOS Schottky technology.
  • Power pack.
  • Guardring for overvoltage protection.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Solder dip 275 °C max.10 s, per JESD 22-B106.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – M2045S-E3

Datasheet Details

Part number M2045S-E3
Manufacturer Vishay
File Size 113.18 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet M2045S-E3 Datasheet
Additional preview pages of the M2045S-E3 datasheet.

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Full PDF Text Transcription

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www.vishay.com M2035S-E3, M2045S-E3 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB 3 2 1 12 3 CASE PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 35 V, 45 V IFSM VF at IF = 20 A 200 A 0.55 V TJ max. 150 °C Package TO-220AB Diode variations Single die FEATURES • Trench MOS Schottky technology • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.
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