* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definiti
MBR10100-M3 Datasheet (106.50 KB)
MBR10100-M3
106.50 KB
High voltage trench mos barrier schottky rectifier.
www.vishay.com MBR1090-M3, MBR10100-M3 Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier TMBS® TO-220AC PIN 1 PIN 2 .
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