MBR1090-M3 Description
MBR1090-M3, MBR10100-M3 Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier TMBS® TO-220AC PIN 1 PIN 2 2 1 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 10 A 90 V, 100 V 150 A 0.65 V 150 °C TO-220AC Diode variations Single die.
MBR1090-M3 Key Features
- Trench MOS Schottky technology
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: for definitions of pliance
MBR1090-M3 Applications
- halogen-free, RoHS-pliant, and mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 an