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Vishay Intertechnology Electronic Components Datasheet

MBR160 Datasheet

Schottky Rectifier

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MBR150, MBR160
Vishay High Power Products
Schottky Rectifier, 1 A
DO-204AL
Cathode
Anode
PRODUCT SUMMARY
IF(AV)
VR
IRM
1A
50/60 V
10 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
IFSM
tp = 5 µs sine
VF 1 Apk, TJ = 125 °C
TJ Range
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DESCRIPTION
The MBR150, MBR160 axial leaded Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
VALUES
1.0
50/60
150
0.65
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
MBR150
50
MBR160
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 75 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 4 mH
Current decaying linearly to zero in 1 µs
Frequency limited by, TJ maximum VA = 1.5 x VR typical
VALUES
1.0
150
25
2.0
1.0
UNITS
A
mJ
A
Document Number: 93439
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

MBR160 Datasheet

Schottky Rectifier

No Preview Available !

MBR150, MBR160
Vishay High Power Products Schottky Rectifier, 1 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
CT
LS
dV/dt
TEST CONDITIONS
1A
2 A TJ = 25 °C
3A
1A
2 A TJ = 125 °C
3A
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.75
0.9
1.0
0.65
0.75
0.82
0.5
5
10
55
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
See fig. 4
TEST CONDITIONS
Approximate weight
Marking device
Case style DO-204AL (DO-41)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
VALUES
- 40 to 150
UNITS
°C
80 °C/W
0.33 g
0.012
oz.
MBR150
MBR160
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93439
Revision: 06-Nov-08


Part Number MBR160
Description Schottky Rectifier
Maker Vishay
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MBR160 Datasheet PDF






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