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MBRF10100CT - Dual High Voltage Trench MOS Barrier Schottky Rectifier

This page provides the datasheet information for the MBRF10100CT, a member of the MBRF1090CT Dual High Voltage Trench MOS Barrier Schottky Rectifier family.

Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number MBRF10100CT
Manufacturer Vishay
File Size 85.22 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBRF10100CT Datasheet
Additional preview pages of the MBRF10100CT datasheet.

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Full PDF Text Transcription

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www.vishay.com MBRF1090CT, MBRF10100CT Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS® ITO-220AB PIN 1 PIN 3 123 PIN 2 FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 5.0 A 90 V, 100 V 120 A 0.
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