MBRF1090CT
MBRF1090CT is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
FEATURES
- Trench MOS Schottky technology
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: For definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max. Package
2 x 5.0 A 90 V, 100 V
120 A 0.75 V 150 °C ITO-220AB
Diode variations mon cathode
MECHANICAL DATA
Case: ITO-220AB
Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, Ro HS-pliant, and mercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage Working peak reverse voltage Max. DC blocking voltage
Max. average forward rectified current at TC = 105 °C total device per diode
VRRM VRWM VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 m H per diode Peak repetitive reverse current at tp = 2 μs, 1 k Hz, TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage from terminal to heatsink with t = 1 min
IRRM d V/dt TJ, TSTG VAC
MBRF1090CT MBRF10100CT 90 100 90 100 90 100 10...
