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Vishay Intertechnology Electronic Components Datasheet

MPS2222A Datasheet

Small Signal Transistor

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MPS2222A
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (NPN)
TO-226AA (TO-92)
0.181 (4.6)
0.142 (3.6)
max.
0.022 (0.55)
0.098 (2.5)
Dimensions in inches
and (millimeters)
Bottom
View
Features
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• On special request, this transistor is also
manufactured in the pin configuration TO-18.
• This transistor is also available in the SOT-23
case with the type designation MMBT2222A.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC 600 mA
Power Dissipation
TA = 25°C
Derate above 25°C
Ptot
625 mW
5.0 mW/°C
Power Dissipation
TC = 25°C
Derate above 25°C
Ptot
1.5 W
12 mW/°C
Thermal Resistance Junction to Ambient Air
RΘJA
200 °C/W
Thermal Resistance Junction to Case
RΘJC
83.3 °C/W
Junction Temperature
Tj 150 °C
Storage Temperature Range
TS
55 to +150
°C
Document Number 88231
10-May-02
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

MPS2222A Datasheet

Small Signal Transistor

No Preview Available !

MPS2222A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
DC Current Gain
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
hFE
VCE = 10 V, IC = 10 mA
TA = -55°C
VCE = 10 V, IC = 150 mA(1)
VCE = 1.0 V, IC = 150 mA(1)
VCE = 10 V, IC = 500 mA(1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage(1)
V(BR)CBO
V(BR)CEO
IC = 10 µA, IE = 0
IC = 10 mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector-Emitter Saturation Voltage(1)
VCEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage(1)
VBEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Collector Cut-off Current
ICEV
VEB = 3 V, VCE = 60 V
Collector Cut-off Current
ICBO
VCB = 60 V, IE = 0
VCB = 50V, IE = 0,TA = 125°C
Emitter Cut-off Current
IEBO
VEB = 3 V, IC = 0
Base Cut-off Current
IBL VCE = 60 V, VEB = 3.0 V
Input Impedance
VCE = 10 V, IC = 1 mA,
f = 1 kHz
hie
VCE = 10 V, IC = 10 mA,
f = 1 kHz
Voltage Feedback Ratio
VCE = 10 V, IC = 1 mA,
f = 1 kHz
hre
VCE = 10 V, IC = 10 mA,
f = 1 kHz
Current Gain-Bandwidth Product
fT
VCE = 20 V, IC = 20 mA
f = 100 MHz
Output Capacitance
COBO VCB = 10 V, f = 1 MHz, IE = 0
Input Capacitance
CIBO VEB = 0.5 V, f = 1 MHz, IC = 0
Note: (1) Pulse test: pulse width 300 µs, cycle 2%
Min
35
50
75
35
100
50
40
75
40
6.0
0.6
2.0
0.25
300
Typ Max Unit
——
——
——
———
300
——
——
——
V
——
V
——
V
0.3
1.0
V
1.2
2.0
V
10 nA
0.01
10
µA
100 nA
20 nA
8.0
k
1.25
8 10-4
4 10-4
— — MHz
8.0 pF
25 pF
www.vishay.com
2
Document Number 88231
10-May-02


Part Number MPS2222A
Description Small Signal Transistor
Maker Vishay
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MPS2222A Datasheet PDF






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