SFH640 Description
The SFH640 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package.
SFH640 Key Features
- Phototransistor optocoupler in a 6 pin DIP package with base connection
- Very high collector emitter breakdown voltage, BVCEO = 300 V
- Isolation rated voltage: 5000 VRMS
- Low coupling capacitance
- High mon m;ode transient immunity
- Material categorization: for definitions of pliance please see .vishay./doc?99912