Description
The SFH640 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package.
Features
- Phototransistor optocoupler in a 6 pin DIP package with base connection.
- Very high collector emitter breakdown voltage, BVCEO = 300 V.
- Isolation rated voltage: 5000 VRMS.
- Low coupling capacitance.
- High common m;ode transient immunity.
- Material categorization: for definitions of compliance please see www. vishay. com/doc?99912
LINKS TO.
SFH640-Vishay.pdf
