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Vishay Intertechnology Electronic Components Datasheet

SIA446DJ Datasheet

N-Channel 150 V (D-S) MOSFET

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www.vishay.com
SiA446DJ
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
150
RDS(on) () MAX.
0.177 at VGS = 10 V
0.185 at VGS = 7.5 V
0.250 at VGS = 6 V
ID (A) a
7.7
7.6
4
PowerPAK® SC-70-6L Single
D
D6
S5
4
Qg (TYP.)
4.3 nC
S
1 2.05 mm
Top View
Marking Code: AV
2
3D
G
Bottom View
1
D
Ordering Information:
SiA446DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• ThunderFET® technology optimizes balance
of RDS(on), Qg, Qsw and Qoss
• 100 % Rg and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converters / boost converters
• Synchronous rectification
• Power management
• LED backlighting
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER S
YMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
LIMIT
150
± 20
7.7
6.2
3.3 b, c
2.6 b, c
10
12
2.9 b, c
7
2.5
19
12
3.5 b, c
2.2 b, c
-55 to 150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER SYMB
OL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The Po werPAK S C-70 is a l eadless package. T he e nd of the l ead te rminal i s expo sed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-0208-Rev. B, 10-Feb-14
1
Document Number: 62925
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com


Vishay Intertechnology Electronic Components Datasheet

SIA446DJ Datasheet

N-Channel 150 V (D-S) MOSFET

No Preview Available !

www.vishay.com
SiA446DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VDS/TJ
VGS(th)/TJ
VGS(th) V
IGSS
IDSS
ID(on) V
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
ID = 250 μA
DS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 150 V, VGS = 0 V
VDS = 150 V, VGS = 0 V, TJ = 55 °C
DS 5 V, VGS = 10 V
VGS = 10 V, ID = 3 A
VGS = 7.5 V, ID = 2 A
VGS = 6 V, ID = 1 A
VDS = 10 V, ID = 3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss -8
Qg
VDS = 75 V, VGS = 0 V, f = 1 MHz
VDS = 75 V, VGS = 10 V, ID = 3.5 A
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Qgs
Qgd -1
Qoss
Rg
td(on)
tr
td(off) -1
tf
td(on)
tr
td(off) -5
tf
IS
ISM
VSD
trr
Qrr
ta
tb
VDS = 75 V, VGS = 7.5 V, ID = 3.5 A
VDS = 75 V, VGS = 0 V
f = 1 MHz
VDD = 75 V, RL = 29 ,
ID 2.6 A, VGEN = 10 V, Rg = 1
VDD = 75 V, RL = 29 ,
ID 2.6 A, VGEN = 6 V, Rg = 1
TC = 25 °C
IS = 3.5 A
IF = 3.5 A, dI/dt = 100 A/μs,
TJ = 25 °C
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
MIN. TYP. MAX. UNIT
150 - - V
- 73
-- 6
-
mV/°C
-
2.5 - 3.5 V
-
-
± 100
nA
- -1
μA
- - 10
10 - - A
- 0.145 0.177
- 0.151 0.185
- 0.165 0.250
-6-S
- 230 -
-4 7 -
-
- 5.3 8
-4 .3 6.5
-1 .2 -
.8 -
- 8.5 -
0.5 2.3 4.6
-5 10
-1 3 25
0 20
-1 0 20
-1 0 20
-4 0 80
10
-1 0 20
pF
nC
ns
- - 12
A
- - 10
- 0.9 1.2 V
- 51 100 ns
-
100 200
nC
-4 3 -
ns
-8-
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0208-Rev. B, 10-Feb-14
2
Document Number: 62925
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SIA446DJ
Description N-Channel 150 V (D-S) MOSFET
Maker Vishay
Total Page 9 Pages
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