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Vishay Intertechnology Electronic Components Datasheet

SIA914DJ Datasheet

Dual N-Channel MOSFET

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New Product
Dual N-Channel 20-V (D-S) MOSFET
SiA914DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.053 at VGS = 4.5 V
20 0.063 at VGS = 2.5 V
0.077 at VGS = 1.8 V
ID (A)a
4.5
4.5
4.5
Qg (Typ.)
4.1 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
RoHS
COMPLIANT
PowerPAK SC-70-6 Dual
1
S1
D1
D1
6
G2
5
2.05 mm
S2
4
2
G1
D2
3
D2
2.05 mm
APPLICATIONS
• Load Switch for Portable Applications
D1
Marking Code
Part # code
CBX
XXX
Lot Traceability
and Date code
G1
G2
D2
Ordering Information: SiA914DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
IS
PD
TJ, Tstg
Limit
20
±8
4.5a
4.5a
4.5a, b, c
3.8b, c
20
4.5a
1.6b, c
6.5
5
1.9b, c
1.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
52
12.5
65 °C/W
16
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74956
S-80436-Rev. B, 03-Mar-08
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SIA914DJ Datasheet

Dual N-Channel MOSFET

No Preview Available !

SiA914DJ
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS /TJ
ΔVGS(th) /TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.7 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 2.5 V, ID = 3.4 A
VGS = 1.8 V, ID = 1.1 A
Forward Transconductancea
gfs VDS = 10 V, ID = 3.7 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
VDS = 10 V, VGS = 8 V, ID = 4.8 A
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 4.8 A
f = 1 MHz
VDD = 10 V, RL = 2.6 Ω
ID 3.8 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 2.6 Ω
ID 3.8 A, VGEN = 8 V, Rg = 1 Ω
TC = 25 °C
IS = 3.8 A, VGS = 0 V
IF = 3.8 A, di/dt = 100 A/µs, TJ = 25 °C
Min.
20
0.4
- 20
Typ. Max. Unit
19
- 2.8
0.043
0.052
0.062
15
1.0
± 100
-1
- 10
0.053
0.063
0.077
V
mV/°C
V
nA
µA
A
Ω
S
400
70
40
7 11.5
4.1 7
0.65
0.8
2.5
5 10
32 50
30 45
53 80
5 10
12 20
15 25
10 15
4.5
20
0.8 1.2
15 30
8.5 20
10
5
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74956
S-80436-Rev. B, 03-Mar-08


Part Number SIA914DJ
Description Dual N-Channel MOSFET
Maker Vishay
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