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Vishay Intertechnology Electronic Components Datasheet

SIB410DK Datasheet

N-Channel MOSFET

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New Product
N-Channel 30 V (D-S) MOSFET
SiB410DK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.042 at VGS = 4.5 V
30 0.046 at VGS = 2.5 V
0.052 at VGS = 1.8 V
ID (A)a
9
9
9
PowerPAK SC-75-6L-Single
D
6
D
5
1.60 mm S
4
1
D
2
D
3
G
S
1.60 mm
Qg (Typ.)
5.7 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Boost Converters
D
Marking Code
Part # code
AHX
XXX
Lot Traceability
and Date code
G
S
Ordering Information: SiB410DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
TC = 25 °C
VGShttp://www.DataSheet4U.net/
±8
9a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
9a
5.9b, c
4.7b, c
Pulsed Drain Current
IDM 20
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
9a
2.1b, c
TC = 25 °C
13
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
8.4
2.5b, c
TA = 70 °C
1.6b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Package limited, TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 67020
S10-2249-Rev. A, 04-Oct-10
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SIB410DK Datasheet

N-Channel MOSFET

No Preview Available !

SiB410DK
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS 4.5 V, ID = 3.8 A
VGS 2.5 V, ID = 3.6 A
VGS 1.8 V, ID = 2 A
VDS = 15 V, ID = 3.8 A
Ciss
Coss
Crss
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 3.4 A
Gate-Source Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 3.4 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
f = 1 MHzhttp://www.DataSheet4U.net/
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 4.3
ID 3.5 A, VGEN = 4.5 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 4.3
ID 3.5 A, VGEN = 8 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
Body Diode Voltage
ISM
VSD IS = 3.5 A, VGS 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
30
0.4
10
0.6
Typ. Max. Unit
31
- 2.7
0.034
0.038
0.041
30
V
mV/°C
1
± 100
1
10
0.042
0.046
0.052
V
nA
µA
A
S
560
60
27
10 15
5.7 8.6
0.85
0.75
36
6 12
10 20
20 40
10 20
5 10
10 20
17 30
10 20
pF
nC
ns
1.5
A
20
0.8 1.2
V
15 30 ns
6 12 nC
8
ns
7
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67020
S10-2249-Rev. A, 04-Oct-10
datasheet pdf - http://www.DataSheet4U.net/


Part Number SIB410DK
Description N-Channel MOSFET
Maker Vishay
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