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Vishay Intertechnology Electronic Components Datasheet

SIB455EDK Datasheet

P-Channel MOSFET

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New Product
P-Channel 12-V (D-S) MOSFET
SiB455EDK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.027 at VGS = - 4.5 V
0.039 at VGS = - 2.5 V
- 12
0.069 at VGS = - 1.8 V
0.130 at VGS = - 1.5 V
ID (A)
- 9a
- 9a
- 9a
-3
Qg (Typ.)
11.3 nC
PowerPAK SC-75-6L-Single
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Performance 1500 V
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
D
6
D
5
1.60 mm S
4
1
D
2
D
3
G
S
1.60 mm
Marking Code
APPLICATIONS
• Load Switch, PA Switch and Battery
Switch for Portable Devices
S
Part # code
BKX
XXX
Lot Traceability
and Date code
G
R
Ordering Information: SiB455EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
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Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 12
± 10
- 9a
- 9a
- 7.8b, c
- 6.2b, c
- 25
- 9a
- 2b, c
13
8.4
2.4b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
41
7.5
51
°C/W
9.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 65599
S09-2682-Rev. A, 14-Dec-09
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SIB455EDK Datasheet

P-Channel MOSFET

No Preview Available !

SiB455EDK
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
VDS = 0 V, VGS = ± 4.5 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 5.6 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 4.7 A
VGS = - 1.8 V, ID = - 3.5 A
VGS = - 1.5 V, ID = - 0.5 A
Forward Transconductancea
gfs VDS = - 6 V, ID = - 5.6 A
Dynamicb
Total Gate Charge
Qg VDS = - 6 V, VGS = - 8 V, ID = - 8 A
Gate-Source Charge
Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 8 A
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rg
td(on)
f = 1 MHz
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Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = 0.9 Ω
ID - 6.5 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = 0.9 Ω
ID - 6.5 A, VGEN = - 8 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 6.5 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 6.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 12
- 0.4
- 15
0.28
Typ.
Max.
Unit
- 2.2
2.7
0.022
0.032
0.056
0.075
18
-1
± 10
±1
-1
- 10
0.027
0.039
0.069
0.13
V
mV/°C
V
µA
A
Ω
S
20 30
11.3 17
0.9
4.3
1.4 2.8
0.4 0.6
1.4 2.1
3.7 5.6
3.2 4.8
0.18 0.27
0.7 1.1
5.5 8.30
3.2 4.8
- 0.85
30
12
12
18
-9
- 25
- 1.2
60
25
nC
kΩ
µs
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65599
S09-2682-Rev. A, 14-Dec-09
datasheet pdf - http://www.DataSheet4U.net/


Part Number SIB455EDK
Description P-Channel MOSFET
Maker Vishay
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