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Vishay Intertechnology Electronic Components Datasheet

SIB800EDK Datasheet

N-Channel MOSFET

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New Product
SiB800EDK
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.225 at VGS = 4.5 V
0.270 at VGS = 2.5 V
0.345 at VGS = 1.8 V
0.960 at VGS = 1.5 V
ID (A)a
1.5
1.5
1.5
0.5
Qg (Typ.)
1.1 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
30 0.29 at 10 mA
IF (A)a
0.4
PowerPAK SC75-6L-Dual
FEATURES
Halogen-free According to IEC 61249-2-21
• LITTLE FOOT® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
• Typical ESD Protection 2800 V
APPLICATIONS
• Portable Devices
• DC/DC Converters
D
K
1
A
2
NC
K
3
D
K
6D
G
5
1.60 mm S
4
1.60 mm
Marking Code
Part # code
GAX
XXX
Lot Traceability
and Date code
G
http://www.DataSheet4U.net/
Ordering Information: SiB800EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
200 Ω
SA
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (MOSFET)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
Pulsed Forward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
PD
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
20
30
±6
1.5a
1.5a
1.5a, b, c
1.3b, c
4
1.5a
0.9b, c
0.4b
0.8
3.1
2
1.1b, c
0.7b, c
3.1
2
1.1b, c
0.7b, c
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SIB800EDK Datasheet

N-Channel MOSFET

No Preview Available !

SiB800EDK
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)b, f
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)b, f
Maximum Junction-to-Case (Drain) (Schottky)
t5s
Steady State
t5s
Steady State
Symbol
RthJA
RthJC
RthJA
RthJC
Typical
90
32
90
32
Maximum
115
40
115
40
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 125 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
gfs
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
IS
ISM
VSD
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 3 V
VDS = 0 V, VGS = ± 6 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 Vhttp://www.DataSheet4U.net/
VGS = 4.5 V, ID = 1.6 A
VGS = 2.5 V, ID = 1.5 A
VGS = 1.8 V, ID = 1.3 A
VGS = 1.5 V, ID = 0.3 A
VDS = 10 V, ID = 1.6 A
VDS = 10 V, VGS = 4.5 V, ID = 1.7 A
f = 1 MHz
VDD = 10 V, RL = 7.7 Ω
ID 1.3 A, VGEN = 4.5 V, Rg = 1 Ω
TC = 25 °C
IS = 1.3 A, VGS = 0 V
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min. Typ. Max.
20
21
- 2.3
0.4 1.0
±1
±1
1
10
4
0.183 0.225
0.220 0.270
0.275 0.345
0.320 0.960
3.5
1.1 1.7
0.2
0.1
200
20 30
12 20
70 105
20 30
1.5
4
0.9 1.2
Unit
V
mV/°C
V
µA
mA
µA
A
Ω
S
nC
Ω
ns
A
V
www.vishay.com
2
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
datasheet pdf - http://www.DataSheet4U.net/


Part Number SIB800EDK
Description N-Channel MOSFET
Maker Vishay
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