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Vishay Intertechnology Electronic Components Datasheet

SIF902EDZ Datasheet

N-channel MOSFET

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SiF902EDZ
Vishay Siliconix
Bi-Directional N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V
0.023 at VGS = 4.0 V
20
0.026 at VGS = 3.1 V
0.028 at VGS = 2.5 V
ID (A)
10.3
10.0
9.4
9.0
Qg (Typ.)
9.1
FEATURES
Halogen-free
• TrenchFET® Power MOSFET: 2.5 V Rated
• ESD Protected: 4000 V
APPLICATIONS
• Battery Protection Circuitry
- Cell Li-lon LiB/LiP Battery Packs
RoHS
COMPLIANT
PowerPAK® 2 x 5
1
S1 2 mm
2
S1
G1
3
6
S2 5
S2 4
G2
Marking Code
MAXYZ
MA: Part # Code
XYZ: Lot Traceability and Date Code
Ordering Information: SiF902EDZ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
1.8 kΩ
D1
1.8 kΩ
G2
S1
D2
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
10.3 7.0
7.4 5.1
Pulsed Drain Current (VGS = 8 V)
IDM 40
Continuous Diode Current (Diode Conduction)a
IS 3.1 1.5
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
3.5 1.6
1.8 0.86
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
30
61
4.8
Maximum
36
76
6.0
Unit
V
A
W
°C
Unit
°C/W
Document Number: 72987
S-80643-Rev. B, 24-Mar-08
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SIF902EDZ Datasheet

N-channel MOSFET

No Preview Available !

SiF902EDZ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 4.5 V
VDS = 0 V, VGS = ± 12 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 7.0 A
VGS = 4.0 V, ID = 6.5 A
VGS = 3.1 V, ID = 4.0 A
VGS = 2.5 V, ID = 3.5 A
VDS = 10 V, ID = 7.0 A
IS = 3.1 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V, ID = 7.0 A
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 4.5 V, Rg = 6 Ω
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
0.6
40
Typ.
Max.
1.5
± 10
± 500
1
5
0.018
0.019
0.021
0.023
38
0.76
0.022
0.023
0.026
0.028
1.1
Unit
V
µA
A
Ω
S
V
9.1 14
1.9 nC
2.7
1.7 2.6
2.3 3.5
µs
1.1 1.7
4.4 6.6
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16
VGS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
100000
10000
1000
100
10 TJ = 150 °C
1
0.1
0.01
TJ = 25 °C
0.001
0.0001
0
4 8 12 16
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
20
www.vishay.com
2
Document Number: 72987
S-80643-Rev. B, 24-Mar-08


Part Number SIF902EDZ
Description N-channel MOSFET
Maker Vishay
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