SIHA25N60EFL Key Features
- Reduced figure-of-merit (FOM): Ron x Qg
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Increased robustness due to low Qrr
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance please see .vishay./doc?99912