SIHD12N50E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance
- Part: SIHD12N50E
- Manufacturer: Vishay (official site)
- Size: 204.62 KB
Other SIHD12N50E Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
SiHD12N50E | N-Channel MOSFET |
SIHD12N50E Description
SiHD12N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 550 VGS = 10 V 50 6 10 Single 0.380 DPAK (TO-252) D S G D G S N-Channel MOSFET.