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Vishay Intertechnology Electronic Components Datasheet

SIHF9640L Datasheet

Power MOSFET

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IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
- 200
VGS = - 10 V
44
Qgs (nC)
7.1
Qgd (nC)
27
Configuration
Single
I2PAK (TO-262)
D2PAK (TO-263)
0.50
S
G
DS
G
D
S
G
D
P-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application. The through-hole version (IRF9640L,
SiHF9640L) is available for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9640S-GE3
Lead (Pb)-free
IRF9640SPbF
SiHF9640S-E3
Note
a. See device orientation.
D2PAK (TO-263)
-
IRF9640STRLPbFa
SiHF9640STL-E3a
D2PAK (TO-263)
-
IRF9640STRRPbFa
SiHF9640STR-E3a
I2PAK (TO-262)
SiHF9640L-GE3
IRF9640LPbF
SiHF9640L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 , IAS = - 11 A (see fig. 12).
c. ISD - 11 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 200
± 20
- 11
- 6.8
- 44
1.0
0.025
700
- 11
13
125
3.0
- 5.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91087
S11-1052-Rev. D, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com


Vishay Intertechnology Electronic Components Datasheet

SIHF9640L Datasheet

Power MOSFET

No Preview Available !

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = 6.6 Ab
VDS = - 50 V, ID = - 6.6 Ab
- 200
-
- 2.0
-
-
-
-
4.1
-
- 0.20
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.50
-
V
V/°C
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 11 A, VDS = - 160 V,
see fig. 6 and 13b
VDD = - 100 V, ID = - 11 A,
Rg = 9.1 , RD = 8.6 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
1200
370
81
-
-
-
14
43
39
38
4.5
7.5
-
-
-
44
7.1
27
-
-
-
-
-
-
pF
nC
ns
nH
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - - 11
A
- - - 44
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = -11 A, VGS = 0 Vb
-
-
- 5.0
V
trr
TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb
-
250 300 ns
Qrr - 2.9 3.6 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91087
S11-1052-Rev. D, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com


Part Number SIHF9640L
Description Power MOSFET
Maker Vishay
Total Page 10 Pages
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