SIHG33N65EF
Key Features
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
