SIHG47N60EF Key Features
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Increased robustness due to low Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance
