SQ3425CEV Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - AEC-Q101 qualified - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 (1, 2, 5, 6) D (3) G (4) S P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TSOP-6 SQ3425CEV (for detailed order number please see .vishay./doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range TC = 25 °C TC = 125 °C L = 0.1 m H TC = 25 °C TC = 125 °C VDS VGS IS IDM IAS EAS TJ, Tstg LIMIT -20 ± 12 -7.4 -4.3 -4.5 -29 -11 6 5 1.67 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR4 material) PCB mount b SYMBOL Rth JA Rth JF LIMIT 110 30 UNIT V A m J W °C UNIT °C/W S23-0668-Rev. A,...