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Vishay Intertechnology Electronic Components Datasheet

SQD50N04-09H Datasheet

Automotive N-Channel MOSFET

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SQD50N04-09H
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
ID (A)
Configuration
TO-252
40
0.009
50
Single
D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
• Compliant to RoHS Directive 2002/95/EC
G
GDS
Top View
Drain Connected to Tab
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD50N04-09H-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Continuous Source Current (Diode Conduction)a
TC = 25 °Ca
TC = 125 °C
ID
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
40
± 20
50
40
50
200
39
76
83
27
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
50
1.8
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S11-2046-Rev. C, 24-Oct-11
1
Document Number: 64702
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SQD50N04-09H Datasheet

Automotive N-Channel MOSFET

No Preview Available !

www.vishay.com
SQD50N04-09H
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
Dynamicb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 40 V
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
VGS = 10 V
VDS5 V
VGS = 10 V
ID = 20 A
VGS = 10 V
ID = 20 A, TJ = 125 °C
VGS = 10 V
ID = 20 A, TJ = 125 °C
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 50 A
f = 1 MHz
VDD = 20 V, RL = 0.4
ID 50 A, VGEN = 10 V, Rg = 1
Pulsed Currenta
Forward Voltage
ISM
VSD IF = 30 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
40 -
-
V
3.4 3.8 5.0
- - ± 100 nA
- - 1.0
- - 50 μA
- - 250
50 -
-A
- 0.0068 0.0090
- - 0.015
- - 0.018
- 48 - S
- 3390 4240
- 408 510 pF
- 164 205
- 51 76
- 19.4 - nC
- 8.5 -
0.65 1.3 2
- 15 23
- 14 21
ns
- 23 35
- 8 12
- - 200 A
-
0.9 1.5
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2046-Rev. C, 24-Oct-11
2
Document Number: 64702
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SQD50N04-09H
Description Automotive N-Channel MOSFET
Maker Vishay
Total Page 9 Pages
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