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Vishay Intertechnology Electronic Components Datasheet

SQJ200EP Datasheet

Automotive Dual N-Channel MOSFETs

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www.vishay.com
SQJ200EP
Vishay Siliconix
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFETs
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
20
0.0088
0.0124
20
Dual N
20
0.0037
0.0050
60
Package
PowerPAK SO-8L Dual Asymmetric
PowerPAK® SO-8L Dual Asymmetric
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1 D2
1
Top View
5.13 mm
D1
D2
1
2 S1
3 G1
4 S2
G2
Bottom View
G1 G2
S1
N-Channel 1 MOSFET
S2
N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL N-CHANNEL 1 N-CHANNEL 2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction)
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
20
20
20
20a
80
22
24.2
27
9
± 20
-55 to +175
260
20
60
50
44
180
40
80
48
16
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount c
SYMBOL
RthJA
RthJC
N-CHANNEL 1
85
5.5
N-CHANNEL 2
85
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-2336-Rev. A, 05-Oct-15
1
Document Number: 67774
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SQJ200EP Datasheet

Automotive Dual N-Channel MOSFETs

No Preview Available !

www.vishay.com
SQJ200EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
VDS
VGS(th)
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = 250 μA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a RDS(on)
Forward Transconductance b
Dynamic b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
Gate-Drain Charge c
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V
VDS = 20 V
VGS = 0 V
VDS = 20 V
VGS = 0 V VDS = 20 V, TJ = 125 °C
VGS = 0 V VDS = 20 V, TJ = 125 °C
VGS = 0 V VDS = 20 V, TJ = 175 °C
VGS = 0 V VDS = 20 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 16 A
VGS = 10 V
ID = 20 A
VGS = 10 V ID = 16 A, TJ = 125 °C
VGS = 10 V ID = 20 A, TJ = 125 °C
VGS = 10 V ID = 16 A, TJ = 175 °C
VGS = 10 V ID = 20 A, TJ = 175 °C
VGS = 4.5 V
ID = 14 A
VGS = 4.5 V
ID = 19 A
VDS = 10 V, ID = 10 A
VDS = 10 V, ID = 10 A
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VDS = 10 V, f = 1 MHz
VDS = 10 V, f = 1 MHz
VDS = 10 V, f = 1 MHz
VDS = 10 V, f = 1 MHz
VDS = 10 V, f = 1 MHz
VDS = 10 V, f = 1 MHz
VDS = 10 V, ID = 20 A
VDS = 10 V, ID = 60 A
VDS = 10 V, ID = 20 A
VDS = 10 V, ID = 60 A
VDS = 10 V, ID = 20 A
VDS = 10 V, ID = 60 A
Gate Resistance
Rg f = 1 MHz
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
MIN.
20
20
1
1
-
-
-
-
-
-
-
-
20
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.1
0.4
TYP. MAX. UNIT
--
--
1.5 2
1.5 2
- ± 100
- ± 100
-1
-1
- 50
- 50
- 150
- 150
--
--
0.0074 0.0088
0.0031 0.0037
0.0110 -
0.0036 -
0.0124 -
0.0063 -
0.0095 0.0124
0.0039 0.0050
55 -
60 -
V
nA
μA
A
Ω
S
723
1937
269
655
112
264
12
29
1.6
4.1
2.5
6
2.3
1
975
2525
675
870
340
350
18
43
-
-
-
-
3.5
1.4
pF
nC
Ω
S15-2336-Rev. A, 05-Oct-15
2
Document Number: 67774
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SQJ200EP
Description Automotive Dual N-Channel MOSFETs
Maker Vishay
Total Page 14 Pages
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