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Vishay Intertechnology Electronic Components Datasheet

SQJ415EP Datasheet

Automotive P-Channel MOSFET

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www.vishay.com
SQJ415EP
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = -10 V
RDS(on) () at VGS = -4.5 V
ID (A)
Configuration
Package
-40
0.0140
0.0200
-30
Single
PowerPAK SO-8L
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
VDS
Gate-source voltage
VGS
Continuous drain current
TC = 25 °C a
TC = 125 °C
ID
Continuous source current (diode conduction) a
IS
Pulsed drain current b
IDM
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
L = 0.1 mH
TC = 25 °C
TC = 125 °C
IAS
EAS
PD
TJ, Tstg
LIMIT
-40
± 20
-30
-23
-30
-120
-25
31.2
45
15
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
RthJA
RthJC
LIMIT
70
3.3
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S18-0087-Rev. A, 29-Jan-18
1
Document Number: 75876
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SQJ415EP Datasheet

Automotive P-Channel MOSFET

No Preview Available !

www.vishay.com
SQJ415EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = -40 V
VGS = 0 V VDS = -40 V, TJ = 125 °C
VGS = 0 V VDS = -40 V, TJ = 175 °C
VGS = -10 V
VDS -5 V
VGS = -10 V
ID = -10 A
VGS = -10 V ID = -10 A, TJ = 125 °C
VGS = -10 V ID = -10 A, TJ = 175 °C
VGS = -4.5 V
ID = -6 A
VDS = -15 V, ID = -10 A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
td(on)
Rise time c
Turn-off delay time c
tr
td(off)
Fall time c
tf
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
Body diode peak reverse recovery
current
IRM(REC)
VGS = 0 V
VDS = -25 V, f = 1 MHz
VGS = -10 V VDS = -20 V, ID = -2.5 A
f = 1 MHz
VDD = -20 V, RL = 8
ID -2.5 A, VGEN = -10 V, Rg = 1
IF = -10 A, VGS = 0 V
IF = -2.5 A, di/dt = 100 A/μs
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
MIN. TYP. MAX. UNIT
-40
-
-
V
-1.5 -2.0 -2.5
-
-
± 100 nA
-
-
-1
-
-
-50
μA
-
-
-150
-30
-
-
A
- 0.0115 0.0140
-
- 0.0219
-
- 0.0261
- 0.0163 0.0200
-
37
-
S
-
4405 6000
-
248 350 pF
-
234 320
-
63
95
-
9.5
-
nC
-
9.5
-
2
4.6
7
-
12
20
-
4
10
ns
-
67
110
-
17
30
-
-
-120
A
-
-0.82 -1.2
V
-
26
55
ns
-
21
50
nC
-
15
-
ns
-
11
-
-
-1.6
-
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0087-Rev. A, 29-Jan-18
2
Document Number: 75876
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SQJ415EP
Description Automotive P-Channel MOSFET
Maker Vishay
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