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Vishay Intertechnology Electronic Components Datasheet

SQJA68EP Datasheet

Automotive N-Channel MOSFET

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www.vishay.com
SQJA68EP
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Single
6.15 mm
1
Top View
5.13 mm
D
1
2S
3S
4S
G
Bottom View
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A) per leg
Configuration
Package
100
0.0920
0.1170
14
Single
PowerPAK SO-8L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
100
± 20
14
8
15
17
9
4
45
15
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
RthJA
RthJC
LIMIT
70
3.3
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-0807-Rev. A, 22-May-17
1
Document Number: 75561
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SQJA68EP Datasheet

Automotive N-Channel MOSFET

No Preview Available !

www.vishay.com
SQJA68EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 100 V
VGS = 0 V VDS = 100 V, TJ = 125 °C
VGS = 0 V VDS = 100 V, TJ = 175 °C
VGS = 10 V
VDS 5 V
VGS = 10 V
ID = 4 A
VGS = 4.5 V
ID = 3 A
VGS = 10 V
ID = 4 A, TJ = 125 °C
VGS = 10 V
ID = 4 A, TJ = 175 °C
VDS = 15 V, ID = 4 A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
td(on)
Rise time c
tr
Turn-off delay time c
td(off)
Fall time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 50 V, ID = 3 A
f = 1 MHz
VDD = 50 V, RL = 33.3 Ω
ID 1.5 A, VGEN = 10 V, Rg = 1 Ω
Pulsed current a
Forward voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery current
ISM
VSD
trr
Qrr
ta
tb
IRM(REC)
IF = 4 A, VGS = 0 V
IF = 3 A, di/dt = 100 A/μs
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
MIN.
100
1.5
-
-
-
-
6
-
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX.
-
-
2.0
2.5
-
± 100
-
1
-
50
-
150
-
-
0.0765 0.0920
0.0967 0.1170
- 0.1620
- 0.2056
8.6
-
212
280
118
160
15
20
4.7
8
0.8
-
1.3
-
4
6
9
15
5
10
15
30
5
10
-
17
0.88
1.2
29
60
27
55
19
-
10
-
-1.9
-
UNIT
V
nA
μA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
ns
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0807-Rev. A, 22-May-17
2
Document Number: 75561
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SQJA68EP
Description Automotive N-Channel MOSFET
Maker Vishay
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