SQJQ114EL Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - AEC-Q101 qualified - 100 % Rg and UIS tested - Thin 1.9 mm height - Material categorization: for definitions of pliance please see .vishay./doc?99912 8 mm PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) e Configuration 100 0.0055 0.0062 136 Single N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAK 8 x 8L SQJQ114EL (for detailed order number please see .vishay./doc?79776) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current e Continuous source current (diode conduction) e Pulsed drain current a, e Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation e Operating junction and storage temperature range Soldering remendations (peak temperature) c TC = 25 °C TC = 125 °C L = 0.1 m H TC = 25 °C TC = 125 °C VDS VGS IS IDM IAS EAS TJ, Tstg LIMIT 100 ± 20 136 78 252 311 46 105 277 92 -55 to +175 260 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain)...