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Vishay Intertechnology Electronic Components Datasheet

SQM40041EL Datasheet

Automotive P-Channel MOSFET

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www.vishay.com
SQM40041EL
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
TO-263
Top View
S
D
G
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = -10 V
RDS(on) () at VGS = -4.5 V
ID (A)
Configuration
Package
-40
0.0034
0.0048
-120
Single
TO-263
G
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-40
± 20
-120
-90
-120
-315
-51
130
157
52
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
PCB mount c
SYMBOL
RthJA
RthJC
LIMIT
40
0.95
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S18-1269-Rev. A, 24-Dec-2018
1
Document Number: 77450
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SQM40041EL Datasheet

Automotive P-Channel MOSFET

No Preview Available !

www.vishay.com
SQM40041EL
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = -250 μA
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = -40 V
VGS = 0 V VDS = -40 V, TJ = 125 °C
VGS = 0 V VDS = -40 V, TJ = 175 °C
VGS = -10 V
VDS -5 V
VGS = -10 V
ID = -25 A
VGS = -10 V ID = -25 A, TJ = 125 °C
VGS = -10 V ID = -25 A, TJ = 175 °C
VGS = -4.5 V
ID = -20 A
VDS = -15 V, ID = -25 A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time c
td(on)
Rise time c
tr
Turn-off delay time c
td(off)
Fall time c
tf
Source-Drain Diode Ratings and Characteristics b
VGS = 0 V
VDS = -25 V, f = 1 MHz
VGS = -10 V VDS = -20 V, ID = -60 A
f = 1 MHz
VDD = -20 V, RL = 0.33
ID -60 A, VGEN = -10 V, Rg = 1
Pulsed current a
Forward voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery current
ISM
VSD
trr
Qrr
ta
tb
IRM(REC)
IF = -50 A, VGS = 0 V
IF = -50 A, di/dt = 100 A/μs
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
MIN. TYP. MAX. UNIT
-40 -
-
V
-1.5 - -2.5
- - ± 100 nA
- - -1
- - -50 μA
- - -250
-50 -
-A
- 0.00283 0.00340
- - 0.00520
- - 0.00620
- 0.00400 0.00480
- 92 - S
- 17 027 23 600
- 1487 2100 pF
- 1079 1500
- 288 450
- 66 - nC
- 52 -
1.3 2.65
4
- 18 30
- 20 40
ns
- 155 300
- 135 250
-
-
-315
A
- -0.85 -1.5 V
- 33 70 ns
- 29 60 nC
- 18 -
ns
- 15 -
- -1.7 -
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-1269-Rev. A, 24-Dec-2018
2
Document Number: 77450
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SQM40041EL
Description Automotive P-Channel MOSFET
Maker Vishay
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