SQM40041EL
FEATURES
- Trench FET® power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested
- AEC-Q101 qualified
- Material categorization: for definitions of pliance please see .vishay./doc?99912
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration Package
-40 0.0034 0.0048
-120 Single TO-263
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation b
Operating junction and storage temperature range
TC = 25 °C a TC = 125 °C
L = 0.1 m H TC = 25 °C TC = 125 °C
VDS VGS
IS IDM IAS EAS
TJ, Tstg
LIMIT -40 ± 20 -120 -90 -120 -315 -51 130 157 52
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-ambient Junction-to-case (drain)
Notes a. Package...
