SQS405CENW Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - AEC-Q101 qualified - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage a Continuous drain current b Continuous source current (diode conduction) b Pulsed drain current c Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) e, f TC = 25 °C TC = 125 °C L = 0.1 m H TC = 25 °C TC = 125 °C VDS VGS IS IDM IAS EAS TJ, Tstg LIMIT -12 ±8 -16 -16 -16 -64 -16 12.8 39 13 -55 to +175 260 UNIT V A m J W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount d SYMBOL Rth JA Rth JC LIMIT 81 3.8 Notes a. Remended maximum positive VGS ratings: +4V in continuous mode, +8V in PWM mode with ≤ 25% duty b. Package limited c. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % d. When mounted on 1" square PCB (FR4 material) e. See solder profile (.vishay./doc?73257) f. Rework conditions: manual soldering with a soldering iron is not remended for leadless ponents UNIT °C/W S21-0970-Rev. B, 11-Oct-2021 Document Number: 63134 For technical questions, contact: automostechsupport@vishay. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT .vishay./doc?91000 .vishay....