Vishay Intertechnology Electronic Components Datasheet

SQUN700E Datasheet

MOSFET

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SQUN700E

Vishay Siliconix

Automotive 40 V N- and P-Channel Common Drain MOSFET Pair

and 200 V N-Channel MOSFET

Package Top View

Package Bottom View

FEATURES

• Optimized triple die package

• TrenchFET® power MOSFET

• 100 % Rg and UIS tested

• AEC-Q101 qualified

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

PRODUCT SUMMARY

N-CH 2 P-CH 1 N-CH 3

VDS (V)

RDS(on) (Ω) at VGS = 10 V

RDS(on) (Ω) at VGS = 4.5 V

ID (A)

Qg typ. (nC)

Configuration

40 -40 200

0.0092 0.030

0.075

0.0135 0.048

30 -30 16

25.5 30.2

N- and p-pair

Package

Triple die

Pin 1/S1

Pin 9/D2

Pin 10/D3

Pin 2/G1

Pin 3/G2

Pin 7, 8/G3

Pin 9/D1

P-Channel MOSFET

Pin 4/S2

N-Channel MOSFET

Pin 5, 6/S3

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

N-CH 2

Drain-source voltage

VDS 40

Gate-source voltage

Continuous drain current (TJ = 175 °C)

Pulsed drain current (t = 300 μs)

Continuous source drain current

Single pulse avalanche current

Single pulse avalanche energy

Maximum power dissipation

Operating junction and storage temperature range

TC = 25 °C

TC = 125 °C

TC = 25 °C

TC = 125 °C

L = 0.1 mH

TC = 25 °C

TC = 125 °C

VGS

IDM

IAS

EAS

TJ, Tstg

120

26.5

P-CH 1

-40

-30

-120

-30

-25

-55 to +175

N-CH 3

200

9.1

12.8

UNIT

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

N-CH 2

P-CH 1

N-CH 3

UNIT

Junction-to-case (drain)

RthJC 2.6 2.6 3.0 °C/W

Notes

a. Package limited, TC = 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

S19-1147-Rev. A, 13-Jan-2020

Document Number: 77017

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Vishay Intertechnology Electronic Components Datasheet

SQUN700E Datasheet

MOSFET

No Preview Available !

www.vishay.com

SQUN700E

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Static

Drain-source breakdown voltage

VDS

Gate-source threshold voltage

VGS(th)

VGS = 0 V, ID = 250 μA

VGS = 0 V, ID = -250 μA

VGS = 0 V, ID = 250 μA

VDS = VGS, ID = 250 μA

VDS = VGS, ID = -250 μA

VDS = VGS, ID = 250 μA

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

Zero gate voltage drain current

IDSS

On-state drain current a

ID(on)

Drain-source on-state resistance a

RDS(on)

Forward transconductance a

Dynamic b

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Gate-source charge

Gate-drain charge

gfs

Ciss

Coss

Crss

Qgs

Qgd

VDS = 40 V, VGS = 0 V

VDS = -40 V, VGS = 0 V

VDS = 200 V, VGS = 0 V

VDS = 40 V, VGS = 0 V, TJ = 125 °C

VDS = -40 V, VGS = 0 V, TJ = 125 °C

VDS = 200 V, VGS = 0 V, TJ = 125 °C

VDS ≥ 5 V, VGS = 10 V

VDS ≤ 5 V, VGS = -10 V

VDS ≥ 5 V, VGS = 10 V

VGS = 10 V, ID = 9.8 A

VGS = -10 V, ID = -6 A

VGS = 10 V, ID = 5 A

VGS = 4.5 V, ID = 8.9 A

VGS = 4.5 V, ID = -4.7 A

VDS = 15 V, ID = 9.8 A

VDS = -15 V, ID = 6 A

VDS = 15 V, ID = 19 A

VDS = 20 V, VGS = 0 V, f = 1 MHz

VDS = -20 V, VGS = 0 V, f = 1 MHz

VDS = 100 V, VGS = 0 V, f = 1 MHz

VDS = 20 V, VGS = 0 V, f = 1 MHz

VDS = -20 V, VGS = 0 V, f = 1 MHz

VDS = 100 V, VGS = 0 V, f = 1 MHz

VDS = 20 V, VGS = 0 V, f = 1 MHz

VDS = -20 V, VGS = 0 V, f = 1 MHz

VDS = 100 V, VGS = 0 V, f = 1 MHz

VDS = 20 V, VGS = 10 V, ID = 10 A

VDS = -20 V, VGS = -10 V, ID = -10 A

VDS = 100 V, VGS = 10 V, ID = 10 A

VDS = 20 V, VGS = 10 V, ID = 10 A

VDS = -20 V, VGS = -10 V, ID = -10 A

VDS = 100 V, VGS = 10 V, ID = 10 A

VDS = 20 V, VGS = 10 V, ID = 10 A

VDS = -20 V, VGS = -10 V, ID = -10 A

VDS = 100 V, VGS = 10 V, ID = 10 A

Gate resistance

Rg f = 1 MHz

MIN. TYP. MAX. UNIT

N-Ch 2 40

P-Ch 1 -40

N-Ch 3 200

N-Ch 2 1.5 2.0 2.5

P-Ch 1 1.5 2.0 2.5

N-Ch 3 2.5 3.0 3.5

N-Ch 2 -

- ± 100

P-Ch 1 -

- ± 100 nA

N-Ch 3 -

- ± 100

N-Ch 2 -

-1

P-Ch 1 -

- -1

N-Ch 3

N-Ch 2

-1

- 50

P-Ch 1 -

- -50

N-Ch 3 -

- 50

N-Ch 2 25

P-Ch 1 -25

-A

N-Ch 3 20

N-Ch 2 - 0.0077 0.0092

P-Ch 1 - 0.0220 0.0300

N-Ch 3 - 0.0710 0.0750 Ω

N-Ch 2 - 0.0940 0.0135

P-Ch 1 - 0.0360 0.0480

N-Ch 2 - 65 -

P-Ch 1 - 16 - S

N-Ch 3 - 19 -

N-Ch 2

P-Ch 1

N-Ch 3

N-Ch 2

P-Ch 1

N-Ch 3

N-Ch 2

P-Ch 1

N-Ch 3

N-Ch 2

P-Ch 1

N-Ch 3

N-Ch 2

P-Ch 1

N-Ch 3

N-Ch 2

P-Ch 1

N-Ch 3

N-Ch 2

P-Ch 1

N-Ch 3

1474

1302

600

218

222

154

30.2

4.4

4.1

3.2

4.3

7.4

2.1

9.5

2.4

S19-1147-Rev. A, 13-Jan-2020

Document Number: 77017

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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