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Vishay Intertechnology Electronic Components Datasheet

SQUN700E Datasheet

MOSFET

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www.vishay.com
SQUN700E
Vishay Siliconix
Automotive 40 V N- and P-Channel Common Drain MOSFET Pair
and 200 V N-Channel MOSFET
Package Top View
Package Bottom View
FEATURES
• Optimized triple die package
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
N-CH 2 P-CH 1 N-CH 3
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Qg typ. (nC)
Configuration
40 -40 200
0.0092 0.030
0.075
0.0135 0.048
-
30 -30 16
25.5 30.2
11
N- and p-pair
Package
Triple die
Pin 1/S1
Pin 9/D2
Pin 10/D3
Pin 2/G1
Pin 3/G2
Pin 7, 8/G3
Pin 9/D1
P-Channel MOSFET
Pin 4/S2
N-Channel MOSFET
Pin 5, 6/S3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CH 2
Drain-source voltage
VDS 40
Gate-source voltage
Continuous drain current (TJ = 175 °C)
Pulsed drain current (t = 300 μs)
Continuous source drain current
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
20
30
30
120
30
30
26.5
35
48
16
P-CH 1
-40
20
-30
-30
-120
-30
-30
-25
31
48
16
-55 to +175
N-CH 3
200
20
16
9.1
50
16
10
16
12.8
50
16
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CH 2
P-CH 1
N-CH 3
UNIT
Junction-to-case (drain)
RthJC 2.6 2.6 3.0 °C/W
Notes
a. Package limited, TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S19-1147-Rev. A, 13-Jan-2020
1
Document Number: 77017
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SQUN700E Datasheet

MOSFET

No Preview Available !

www.vishay.com
SQUN700E
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS
Gate-source threshold voltage
VGS(th)
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = -250 μA
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = -250 μA
VDS = VGS, ID = 250 μA
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
RDS(on)
Forward transconductance a
Dynamic b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS = 40 V, VGS = 0 V
VDS = -40 V, VGS = 0 V
VDS = 200 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 125 °C
VDS = -40 V, VGS = 0 V, TJ = 125 °C
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VDS 5 V, VGS = 10 V
VDS 5 V, VGS = -10 V
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 9.8 A
VGS = -10 V, ID = -6 A
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 8.9 A
VGS = 4.5 V, ID = -4.7 A
VDS = 15 V, ID = 9.8 A
VDS = -15 V, ID = 6 A
VDS = 15 V, ID = 19 A
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = -20 V, VGS = 0 V, f = 1 MHz
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = -20 V, VGS = 0 V, f = 1 MHz
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = -20 V, VGS = 0 V, f = 1 MHz
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 10 A
VDS = -20 V, VGS = -10 V, ID = -10 A
VDS = 100 V, VGS = 10 V, ID = 10 A
VDS = 20 V, VGS = 10 V, ID = 10 A
VDS = -20 V, VGS = -10 V, ID = -10 A
VDS = 100 V, VGS = 10 V, ID = 10 A
VDS = 20 V, VGS = 10 V, ID = 10 A
VDS = -20 V, VGS = -10 V, ID = -10 A
VDS = 100 V, VGS = 10 V, ID = 10 A
Gate resistance
Rg f = 1 MHz
MIN. TYP. MAX. UNIT
N-Ch 2 40
-
-
P-Ch 1 -40
-
-
N-Ch 3 200
-
-
N-Ch 2 1.5 2.0 2.5
V
P-Ch 1 1.5 2.0 2.5
N-Ch 3 2.5 3.0 3.5
N-Ch 2 -
- ± 100
P-Ch 1 -
- ± 100 nA
N-Ch 3 -
- ± 100
N-Ch 2 -
-1
P-Ch 1 -
- -1
N-Ch 3
N-Ch 2
-
-
-1
mA
- 50
P-Ch 1 -
- -50
N-Ch 3 -
- 50
N-Ch 2 25
-
-
P-Ch 1 -25
-
-A
N-Ch 3 20
-
-
N-Ch 2 - 0.0077 0.0092
P-Ch 1 - 0.0220 0.0300
N-Ch 3 - 0.0710 0.0750 Ω
N-Ch 2 - 0.0940 0.0135
P-Ch 1 - 0.0360 0.0480
N-Ch 2 - 65 -
P-Ch 1 - 16 - S
N-Ch 3 - 19 -
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1474
1302
600
218
222
70
89
154
5
23
30.2
11
4.4
4.1
3.2
4.3
7.4
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.1
9.5
2.4
pF
nC
Ω
S19-1147-Rev. A, 13-Jan-2020
2
Document Number: 77017
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SQUN700E
Description MOSFET
Maker Vishay
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