www.vishay.com
SQUN700E
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS
Gate-source threshold voltage
VGS(th)
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = -250 μA
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = -250 μA
VDS = VGS, ID = 250 μA
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
RDS(on)
Forward transconductance a
Dynamic b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS = 40 V, VGS = 0 V
VDS = -40 V, VGS = 0 V
VDS = 200 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 125 °C
VDS = -40 V, VGS = 0 V, TJ = 125 °C
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VDS ≥ 5 V, VGS = 10 V
VDS ≤ 5 V, VGS = -10 V
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 9.8 A
VGS = -10 V, ID = -6 A
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 8.9 A
VGS = 4.5 V, ID = -4.7 A
VDS = 15 V, ID = 9.8 A
VDS = -15 V, ID = 6 A
VDS = 15 V, ID = 19 A
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = -20 V, VGS = 0 V, f = 1 MHz
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = -20 V, VGS = 0 V, f = 1 MHz
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = -20 V, VGS = 0 V, f = 1 MHz
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 10 A
VDS = -20 V, VGS = -10 V, ID = -10 A
VDS = 100 V, VGS = 10 V, ID = 10 A
VDS = 20 V, VGS = 10 V, ID = 10 A
VDS = -20 V, VGS = -10 V, ID = -10 A
VDS = 100 V, VGS = 10 V, ID = 10 A
VDS = 20 V, VGS = 10 V, ID = 10 A
VDS = -20 V, VGS = -10 V, ID = -10 A
VDS = 100 V, VGS = 10 V, ID = 10 A
Gate resistance
Rg f = 1 MHz
MIN. TYP. MAX. UNIT
N-Ch 2 40
-
-
P-Ch 1 -40
-
-
N-Ch 3 200
-
-
N-Ch 2 1.5 2.0 2.5
V
P-Ch 1 1.5 2.0 2.5
N-Ch 3 2.5 3.0 3.5
N-Ch 2 -
- ± 100
P-Ch 1 -
- ± 100 nA
N-Ch 3 -
- ± 100
N-Ch 2 -
-1
P-Ch 1 -
- -1
N-Ch 3
N-Ch 2
-
-
-1
mA
- 50
P-Ch 1 -
- -50
N-Ch 3 -
- 50
N-Ch 2 25
-
-
P-Ch 1 -25
-
-A
N-Ch 3 20
-
-
N-Ch 2 - 0.0077 0.0092
P-Ch 1 - 0.0220 0.0300
N-Ch 3 - 0.0710 0.0750 Ω
N-Ch 2 - 0.0940 0.0135
P-Ch 1 - 0.0360 0.0480
N-Ch 2 - 65 -
P-Ch 1 - 16 - S
N-Ch 3 - 19 -
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
N-Ch 2
P-Ch 1
N-Ch 3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1474
1302
600
218
222
70
89
154
5
23
30.2
11
4.4
4.1
3.2
4.3
7.4
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.1
9.5
2.4
pF
nC
Ω
S19-1147-Rev. A, 13-Jan-2020
2
Document Number: 77017
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000