SQUN700E
FEATURES
- Optimized triple die package
- Trench FET® power MOSFET
- 100 % Rg and UIS tested
- AEC-Q101 qualified
- Material categorization: for definitions of pliance please see .vishay./doc?99912
PRODUCT SUMMARY
N-CH 2 P-CH 1 N-CH 3
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Qg typ. (n C) Configuration
40 -40 200
0.0092 0.030
0.0135 0.048
- 30 -30 16
25.5 30.2
N- and p-pair
Package
Triple die
Pin 1/S1
Pin 9/D2
Pin 10/D3
Pin 2/G1
Pin 3/G2
Pin 7, 8/G3
Pin 9/D1 P-Channel MOSFET
Pin 4/S2 N-Channel MOSFET
Pin 5, 6/S3 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CH 2
Drain-source voltage
VDS 40
Gate-source voltage Continuous drain current (TJ = 175 °C) Pulsed drain current (t = 300 μs) Continuous source drain current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range
TC = 25 °C TC = 125...
