The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.vishay.com
SS2FN6
Vishay General Semiconductor
Surface-Mount Schottky Barrier Rectifier
eSMP® Series
Top view
Bottom view
SMF (DO-219AB)
Cathode
Anode
ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 2.0 A (TA = 125 °C) TJ max. (AC mode) TJ max. (DC forward current) Package
2.0 A 60 V 50 A 0.48 V 150 °C 175 °C SMF (DO-219AB)
Circuit configuration
Single
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Wave and reflow solderable
• AEC-Q101 qualified - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.