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SUD19N20-90 - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • PWM Optimized.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

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SUD19N20-90 Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.090 at VGS = 10 V 0.105 at VGS = 6 V ID (A) 19 17.
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