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Vishay Intertechnology Electronic Components Datasheet

SUD50N025-4m5P Datasheet

N-Channel MOSFET

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SUD50N025-4m5P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
25 0.0045 at VGS = 10 V
0.0060 at VGS = 4.5 V
ID (A)a, d
50
50
Qg (Typ.)
36.25 nC
TO-252
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• DC/DC Conversion, Low-Side
- Desktop PC
- Server
D
RoHS
COMPLIANT
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N025-4m5P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current
Repetitive Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
25
± 20
50a, d
50a, d
18b, c
15b, c
100
28
39
50a, d
2.1b, c
108a
75.6a
2.5b, c
1.75b, c
- 55 to 175
Unit
V
A
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, c
Maximum Junction-to-Case
t 10 s
Steady State
Symbol
RthJA
RthJC
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Calculated based on maximum junction temperature. Package limitation current is 50 A.
e. Maximum under Steady State conditions is 90 °C/W.
Typical
48
1.6
Maximum
60
2
Unit
°C/W
Document Number: 74951
S-81735-Rev. B, 04-Aug-08
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SUD50N025-4m5P Datasheet

N-Channel MOSFET

No Preview Available !

SUD50N025-4m5P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
RDS(on)
gfs
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 18 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 12 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 13 V, VGS = 10 V, ID = 18 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 13 V, VGS = 4.5 V, ID = 15 A
f = 1 MHz
VDD = 13 V, RL = 0.722 Ω
ID 18 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 13 V, RL = 0.87 Ω
ID 15 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 15 A
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
25 V
25.7
- 6.6
mV/°C
1 3V
± 100
nA
1
µA
10
50 A
0.0037 0.0045
0.005 0.006
Ω
98 S
5102
1025
525
76.3
115
36.3
55
10.2
7.6
0.53 1.05 1.58
48 72
175 263
84 126
51 77
24 36
8 12
12 18
8.5 13
pF
nC
Ω
ns
0.9
26.3
16
12.8
13.5
50
90
1.5
40
24
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74951
S-81735-Rev. B, 04-Aug-08


Part Number SUD50N025-4m5P
Description N-Channel MOSFET
Maker Vishay
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