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SUD50N025-4m5P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
25 0.0045 at VGS = 10 V 0.0060 at VGS = 4.5 V
ID (A)a, d 50 50
Qg (Typ.) 36.25 nC
TO-252
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • DC/DC Conversion, Low-Side
- Desktop PC - Server
D
RoHS
COMPLIANT
GDS Top View
Drain Connected to Tab
Ordering Information: SUD50N025-4m5P-E3 (Lead (Pb)-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Repetitive Avalanche Energy
L = 0.
SUD50N025-4m5P Datasheet
